Capacitive Behavior of Single Gallium Oxide Nanobelt
نویسندگان
چکیده
In this research, monocrystalline gallium oxide (Ga₂O₃) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga₂O₃ nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga₂O₃ nanobelt, indicating the existence of capacitive elements in the Pt/Ga₂O₃/Pt structure.
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